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SHINDENGEN
Schottky Rectifiers (SBD)
Single
D3FS6
60V 3A
OUTLINE DIMENSIONS
Case : 2F Unit : mm
RATINGS
*oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Peake Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSMPulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=25*Z*@On alumina substrate 50Hz sine wave, R-load Tl=87*Z Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z Repetitive Peak Surge Reverse Power PRRSMPulse width 10Es, Tj=25*Z *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF=3A, Pulse measurement Reverse Current IR VR RM Pulse measurement =V , Junction Capacitance Cj f=1MHz, R V =10V junction to lead AEjl Thermal Resistance AEja junction to ambient*@On alumina substrate junction to ambient*@On glass-epoxy substrate Ratings -55*150 150 60 65 1.65 3.0 80 330 Unit *Z *Z V V A A W
Ratings Max.0.58 Max.2.5 Typ.130 Max.24 Max.90 Max.124
Unit V mA pF *Z/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D3FS6
Forward Voltage
10
Forward Current IF [A]
Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D3FS6
Junction Capacitance
f=1MHz Tl=25C TYP
1000
Junction Capacitance Cj [pF]
100
10 0.1 1
10
Reverse Voltage VR [V]
D3FS6
100
Reverse Current
Tl=150C [TYP]
Tl=125C [TYP] 10 Tl=100C [TYP]
Reverse Current IR [mA]
1
Tl=75C [TYP]
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
50
60
Reverse Voltage VR [V]
D3FS6
10
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
8
DC D=0.05 0.1 0.2 0.3
6
4
0.5
2
SIN 0.8
0
0
10
20
30
40
50
60
70
Reverse Voltage VR [V]
Tj = 150C
0 VR tp D=tp /T T
D3FS6
1.4
Forward Power Dissipation
DC
Forward Power Dissipation PF [W]
1.2 0.5 SIN 0.3 0.8 0.1 0.6 0.05 0.2
D=0.8
1
0.4
0.2
0
0
0.5
1
1.5
2
2.5
3
Average Rectified Forward Current IO [A]
Tj = 150C IO 0 tp D=tp /T T
D3FS6
3
Derating Curve
Average Rectified Forward Current IO [A]
DC 2.5 D=0.8
Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm
2 SIN 1.5 0.5
1
0.3 0.2 0.1
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
D3FS6
6
Derating Curve
Average Rectified Forward Current IO [A]
5
DC D=0.8
4 0.5 3 SIN 0.3 0.2 0.1 1 0.05
2
0
0
20
40
60
80
100
120
140
160
Lead Temperature Tl [C]
VR = 30V 0 0
IO
VR tp D=tp /T T
D3FS6
100
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
80
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25C before surge current is applied
60
40
20
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [C]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM p) / PRRSM p=10s) Ratio (t (t
1
0.1
1
10
100
Pulse Width t p [s]
IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP

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